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Yao-Yi Li

Title: Distinguished Research Fellow
Email: yaoyili@sjtu.edu.cn
Phone: +86-21-5474-3165
Address: Room 907, Physics Building
Related Links:
Area of Physics:  Surface Physics 

Research Interests:

1. Scanning Tunneling Microscopy/ Spectroscopy
2. MBE Growth of Nanostructure
3. Quantum Topological Matter
 

Biographical Sketch:

Education:
Sep 2001 – Jun 2005, B.S. in Physics,
Department of Physics, Wuhan University, Hubei, P. R. China
Sep 2005 – Aug 2007, Ph.D. Candidate,
State Key Laboratory for Surface Physics,
Institute of Physics, Chinese Academy of Sciences, Beijing, P. R. China
Sep 2007 – Jan 2011, Ph.D. in Physics,
Department of Physics, Tsinghua University, Beijing, P. R. China
Employment:
Feb 2011 – June 2015
Postdoctoral Research Associate,
Department of Physics, University of Wisconsin-Milwaukee, WI, USA
July 2015 – Present
Distinguished Research Fellow,
Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, P. R. China

Selected Publications: 

  1. Y. Y. Li, M. X. Chen, M. Weinert, and L. Li*, Direct Experimental Determination of Onset of Electron–Electron Interactions in Gap Opening of Zigzag Graphene Nanoribbons, Nature Communications 5, 4311 (2014).
  2. Y. Liu, Y. Y. Li, S. Rajput, D. Gilks, L. Lari, P. L. Galindo, M. Weinert, V. K. Lazarov* and L. Li*, Tuning Dirac States by Strain in the Topological Insulator Bi2Se3, Nature Physics 10, 294 (2014). (Cover Article)
  3. S. Rajput*, Y. Y. Li, and L. Li, Direct Experimental Evidence for the Reversal of Carrier Type upon Hydrogen Intercalation in Epitaxial Graphene-SiC(0001), Applied Physics Letters 104, 041908 (2014).
  4. S. Rajput, M. X. Chen, Y. Liu, Y. Y. Li, M. Weinert, and L. Li*, Spatial Fluctuations in Barrier Height at the Graphene-Silicon Carbide Schottky Junction, Nature Communications 4, 2752 (2013).
  5. Y. Liu, Y. Y. Li, D. Gilks, V. K. Lazarov, M. Weinert, and L. Li*, Charging Dirac States at Antiphase Domain Boundaries in the Three-Dimensional Topological Insulator Bi2Se3, Physical Review Letters 110, 186804 (2013). (Cover Article)
  6. G. Wang, X. G. Zhu, Y. Y. Sun, Y. Y. Li, T. Zhang, J. Wen, X. Chen,  K. He, L. L. Wang, X. C. Ma, J. F. Jia, S. B. Zhang*, and Q. K. Xue*,Topological Insulator Thin Films of Bi2Te3 with Controlled Electronic Structure, Advanced Materials 23, 2929 (2011).
  7. Y. Y. Li, G. Wang, X. G. Zhu, M. H. Liu, C. Ye, X. Chen, Y. Y. Wang, K. He, L. L. Wang, X. C. Ma, H. J. Zhang, X. Dai, Z. Fang, X. C. Xie, Y. Liu, X. L. Qi, J. F. Jia*, S. C. Zhang, and Q. K. Xue, Intrinsic Topological Insulator Bi2Te3 Thin Films on Si and Their Thickness Limit,Advanced Materials 22, 4002 (2010).
  8. Y. Y. Li, M. Liu, D. Y. Ma, D. C. Yu, X. Chen, X. C. Ma, Q. K. Xue, K. W. Xu, J. F. Jia*, and F. Liu*, Bistability of Nanoscale Ag Islands on a Si(111)-(4×1)-In Surface Induced by Anisotropic Stress, Physical Review Letters 103, 076102 (2009).