Scanning tunneling microscopy was invented as a high-magnification tool. It is indeed able to observe the solid surface down to atomic level and was employed to study the atomic process during the thin film growth. But more than that, combining with tunneling spectroscopy, we can also explore the electronic property of the samples. Specifically, the quantum interference induced 2D electron standing waves are resolved on a topological Weyl semimetals surface. Furthermore, we develop a new method to extract the transport information from a single dopant atom in a semiconductor matrix.
Dr Hao Zheng obtained his Ph.D degree from the Institute of Physics, Chinese Academic of Sciences. He has done postdoc research in several countries, including University of Birmingham in UK, Kiel University in Germany and Princeton University in USA. In the last ten years, he applied scanning tunneling microscopy/spectroscopy to investigate the growth kinetic of thin films, the transport property of single dopant atoms and the quantum interference on Weyl semimetals.