Atomic structure & properties of silicon carbide (SiC) surfaces, sub-surface and interfaces are driven by intrinsic stress. For cubic 3C-SiC, this leads up-to 10 surface reconstructions from Si- to C-rich and to self-organized Si atomic-lines formation. Furthermore, atomic H/D exposures trigger 3C-SiC surface metallization, which is the 1st example of H/D-induced semiconductor surface metallization [1]. Now, the 1st evidence of H/D-induced nano-tunnel opening at a sub-surface is shown for 3C-SiC(100), with selective interaction occurring at a surface having intrinsic compressive stress [2]. Such a finding is established using ab-initio computations, vibrational spectroscopy and synchrotron radiationbased photoemission spectroscopy, in addition to previous scanning tunneling microscopy (STM) and spectroscopy (STS), and infrared absorption spectroscopy (IRAS). H/D-induced puckering of the sub-surface Si atoms marks the critical step in such a nano-tunnel opening. Depending on the H/D coverage, these nano-tunnels are either metallic or semiconducting. Dangling bonds generated inside nano-tunnel offer a promising template to capture molecules or atoms, opening nano-tailoring capabilities for advanced applications in electronics, chemistry or photonics [2].
1 – V. Derycke, P. Soukiassian, F. Amy, Y. Chabal, M. D’angelo, H. Enriquez and M. Silly, Nature Mat. 2, 253 (2003).
2 – P. Soukiassian, E. Wimmer, E. Celasco, Cl. Giallombardo, S. Bonanni, L. Vattuone, L. Savio, A. Tejeda, M. Silly, M. D’angelo, F. Sirotti and M. Rocca, Nature Com., in press (2013).
Patrick Soukiassian is Professor of Physics (Exceptionnal Class) at the University of Paris-Sud/Orsay since 1988 and Head of the SIMA research group at CEA/Saclay (Atomic Energy Commission) France. He is been elected Member of the National Academy of Sciences of Armenia. He serves as Editorial Board Member on Journal of Physics D: Applied Physics, Surface Review and Letters and e-Journal of Surface Science and Nanotechnology. His research interests focus on the atomic structure, properties, catalysis and nanochemistry of semiconductor and metal surfaces, interfaces and nano-objects, in particular those of silicon carbide, using near-field scanning probe microscopy/spectroscopy and synchrotron radiation-based techniques. Patrick Soukiassian is the 2007 Laureate of the Semiconductor Surfaces, Interfaces and Nanostructures Prize (SSIN-2007) for « His Pioneering and Seminal Contributions to the Field, and Particularly his Work Exploring Silicon Carbide ».